Technical information for Siliconized Silicon Carbide (SiSiC) or Reaction-Bonded SiC (RBSiC)

ITEM Unit Data
Temperature of application 1380℃
Density G/cm3 >3.02
Open porosity % <0.1
Bending strength Mpa 250 (20℃)
Mpa 280 (1200℃ )
Modulus of elasticity GPa 330 (20℃)
GPa 300 ( 1200℃ )
Thermal conductivity W/m.k 45 (1200℃ )
Coefficient of thermal expansion K-1 ×10-6 4.5
Rigidity 13
Acid-proof alkaline excellent

For further information, you can contact our Sales Engineer, or you can contact us directly or here.